NTS2101PT1
MOSFET P-CH 8V 1.4A SC70-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTS2101PT1 is a P-channel MOSFET designed for voltage regulation and switching applications. This component features a drain-source voltage (Vdss) of 8 V and a continuous drain current (Id) of 1.4 A at 25°C. With a maximum on-resistance (Rds On) of 100 mOhm at 1 A and 4.5 V gate-source voltage, it offers efficient power handling. The NTS2101PT1 is housed in a compact SC-70-3 (SOT323) surface-mount package, suitable for space-constrained designs. Key electrical characteristics include a maximum power dissipation of 290 mW (Ta), a gate charge (Qg) of 6.4 nC at 5 V, and an input capacitance (Ciss) of 640 pF at 8 V. The device operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is commonly utilized in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 290mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SC-70-3 (SOT323) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 8 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.4 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 640 pF @ 8 V |
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