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NTR4503NT3G

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NTR4503NT3G

MOSFET N-CH 30V 1.5A SOT23-3

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTR4503NT3G is an N-Channel MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 30 V and a continuous Drain Current (Id) of 1.5 A at 25°C, with a maximum power dissipation of 420 mW. The device offers a low on-resistance of 110 mOhm at 2.5 A and 10 V. Key parameters include a gate charge (Qg) of 7 nC at 10 V and input capacitance (Ciss) of 250 pF at 24 V. The NTR4503NT3G utilizes MOSFET technology and is housed in a SOT-23-3 (TO-236) surface-mount package, supplied on tape and reel. It operates within an ambient temperature range of -55°C to 150°C. This component is commonly found in consumer electronics and industrial automation systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C1.5A (Ta)
Rds On (Max) @ Id, Vgs110mOhm @ 2.5A, 10V
FET Feature-
Power Dissipation (Max)420mW (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageSOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds250 pF @ 24 V

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