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NTR4503NT3

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NTR4503NT3

MOSFET N-CH 30V 1.5A SOT23-3

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTR4503NT3 is an N-Channel MOSFET designed for efficient switching applications. This component features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 1.5 A at 25°C, with a maximum power dissipation of 420 mW (Ta). The device exhibits a low on-resistance (Rds On) of 110 mOhm at 2.5 A and 10 V, and is specified for operation with gate-source drive voltages between 4.5 V and 10 V. Key parameters include a gate charge (Qg) of 7 nC maximum at 10 V and an input capacitance (Ciss) of 250 pF maximum at 24 V. The NTR4503NT3 is housed in a compact SOT-23-3 (TO-236) surface-mount package, suitable for automated assembly. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is commonly utilized in consumer electronics and industrial automation. The device is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C1.5A (Ta)
Rds On (Max) @ Id, Vgs110mOhm @ 2.5A, 10V
FET Feature-
Power Dissipation (Max)420mW (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageSOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds250 pF @ 24 V

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