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NTR4502PT3

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NTR4502PT3

MOSFET P-CH 30V 1.13A SOT23-3

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTR4502PT3 is a P-Channel Power MOSFET designed for efficient switching applications. This component features a drain-to-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 1.13 A at 25°C (Ta). The device exhibits a maximum Rds(On) of 200 mOhm at 1.95 A and 10 V gate-source voltage. Key characteristics include a gate charge (Qg) of 10 nC at 10 V and an input capacitance (Ciss) of 200 pF at 15 V. With a maximum power dissipation of 400 mW (Tj), this MOSFET is suitable for operation across a wide temperature range of -55°C to 150°C (TJ). The NTR4502PT3 is supplied in a SOT-23-3 (TO-236) surface mount package, delivered on tape and reel. This component finds application in various industries including consumer electronics and industrial automation.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C1.13A (Ta)
Rds On (Max) @ Id, Vgs200mOhm @ 1.95A, 10V
FET Feature-
Power Dissipation (Max)400mW (Tj)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageSOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds200 pF @ 15 V

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