Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

NTR4501NT3G

Banner
productimage

NTR4501NT3G

MOSFET N-CH 20V 3.2A SOT23-3

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NTR4501NT3G is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-to-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 3.2A at 25°C (Ta). The device exhibits a maximum On-Resistance (Rds On) of 80mOhm at 3.6A and 4.5V Vgs, with a typical gate charge (Qg) of 6 nC at 4.5V. It is housed in a compact SOT-23-3 (TO-236) surface-mount package, facilitating high-density board designs. The maximum power dissipation is rated at 1.25W (Tj). This MOSFET is suitable for use in power management, consumer electronics, and automotive applications. It operates across a wide temperature range of -55°C to 150°C (TJ).

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3.2A (Ta)
Rds On (Max) @ Id, Vgs80mOhm @ 3.6A, 4.5V
FET Feature-
Power Dissipation (Max)1.25W (Tj)
Vgs(th) (Max) @ Id1.2V @ 250µA
Supplier Device PackageSOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds200 pF @ 10 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
FCP850N80Z

MOSFET N-CH 800V 8A TO220-3

product image
MCH3476-TL-H

MOSFET N-CH 20V 2A SC70FL/MCPH3

product image
RFD14N05LSM

MOSFET N-CH 50V 14A TO252AA