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NTR4501NT3

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NTR4501NT3

MOSFET N-CH 20V 3.2A SOT23-3

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTR4501NT3 is an N-Channel MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 20 V and a continuous Drain Current (Id) of 3.2 A at 25°C ambient. The Rds On is specified at a maximum of 80 mOhm at 3.6 A and 4.5 V gate drive. Gate charge (Qg) is typically 6 nC at 4.5 V, and input capacitance (Ciss) is a maximum of 200 pF at 10 V. The device operates within a temperature range of -55°C to 150°C (TJ) and offers a maximum power dissipation of 1.25 W (Tj). Packaged in a compact SOT-23-3 (TO-236) surface mount configuration, the NTR4501NT3 is suitable for use in consumer electronics and industrial control systems. It supports gate drive voltages from 1.8 V to 4.5 V and has a maximum gate-source voltage (Vgs) of ±12V.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3.2A (Ta)
Rds On (Max) @ Id, Vgs80mOhm @ 3.6A, 4.5V
FET Feature-
Power Dissipation (Max)1.25W (Tj)
Vgs(th) (Max) @ Id1.2V @ 250µA
Supplier Device PackageSOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds200 pF @ 10 V

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