NTR4170NT3G
MOSFET N-CH 30V 3.2A SOT23-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTR4170NT3G is an N-Channel Power MOSFET with a Drain-Source Voltage (Vdss) of 30 V. It offers a continuous drain current (Id) of 2.4 A at 25°C and a maximum power dissipation of 480 mW (Ta). This device features a low on-resistance (Rds On) of 55 mOhm at 3.2 A and 10 V gate-source voltage. Key parameters include a Gate Charge (Qg) of 4.76 nC at 4.5 V and input capacitance (Ciss) of 432 pF at 15 V. The NTR4170NT3G is housed in a SOT-23-3 (TO-236) surface mount package and operates across a temperature range of -55°C to 150°C. This component is suitable for various applications including power management and general switching in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 3.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 480mW (Ta) |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.76 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 432 pF @ 15 V |
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