NTR3A30PZT1G-M02
NTR3A30PZT1G-M02Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTR3A30PZT1G-M02 is a P-Channel Power MOSFET designed for efficient switching applications. This component features a drain-source voltage (Vdss) of 20 V and a continuous drain current (Id) capability of 3 A at 25°C ambient temperature, with a maximum power dissipation of 480 mW (Ta). The device exhibits a low on-resistance (Rds On) of 38 mOhm at 3 A and 4.5 V Vgs. It operates with a gate-source voltage (Vgs) range of ±8V and a threshold voltage (Vgs(th)) of 1V at 250µA. Key electrical characteristics include input capacitance (Ciss) of 1651 pF at 15V and gate charge (Qg) of 17.6 nC at 4.5V. The NTR3A30PZT1G-M02 is housed in a SOT-23-3 (TO-236) surface mount package and is suitable for operation across a wide temperature range of -55°C to 150°C (TJ). This MOSFET is commonly utilized in consumer electronics, industrial automation, and power management solutions.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 38mOhm @ 3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 480mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1651 pF @ 15 V |
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