NTR3162PT3G
MOSFET P-CH 20V 2.2A SOT23-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTR3162PT3G is a P-Channel MOSFET designed for surface mount applications in a SOT-23-3 (TO-236) package. This device features a Drain-Source Voltage (Vdss) of 20V and a continuous drain current (Id) capability of 2.2A at 25°C. With a maximum on-resistance (Rds On) of 70mOhm at 2.2A and 4.5V Vgs, it offers efficient switching. The gate drive voltage range is specified from 1.5V to 4.5V. Key parameters include a maximum power dissipation of 480mW (Ta) and a gate charge (Qg) of 10.3nC at 4.5V Vgs. Input capacitance (Ciss) is rated at a maximum of 940pF at 10V Vds. This component is suitable for use in various industries including automotive and industrial control systems. The operating temperature range is -55°C to 150°C (TJ). This part is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 2.2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 480mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.3 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 940 pF @ 10 V |