NTR3162PT1G
MOSFET P-CH 20V 2.2A SOT23-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTR3162PT1G is a P-Channel MOSFET designed for surface mount applications. This component features a Drain-to-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 2.2A at 25°C. The Rds On is specified at a maximum of 70mOhm at 2.2A and 4.5V gate drive. Gate charge (Qg) is 10.3 nC maximum at 4.5V, with input capacitance (Ciss) at 940 pF maximum at 10V. The device is housed in a SOT-23-3 (TO-236) package and operates within a temperature range of -55°C to 150°C. Power dissipation is rated at 480mW. This MOSFET is suitable for various applications including power management and general-purpose switching.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 2.2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 480mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.3 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 940 pF @ 10 V |