NTR3161NT1G
MOSFET N-CH 20V 3.3A SOT23-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTR3161NT1G is a 20V N-Channel MOSFET designed for efficient power switching applications. This component features a low Rds(on) of 50mOhm at 3.3A and 4.5V Vgs, minimizing conduction losses. With a continuous drain current capability of 3.3A (Ta) and a maximum power dissipation of 820mW (Ta), it is suitable for various electronic systems. The SOT-23-3 (TO-236) surface mount package offers a compact footprint for board-level integration. Key electrical parameters include a gate charge of 7.3 nC at 4.5V and an input capacitance of 540 pF at 10V Vds. This MOSFET operates across a wide temperature range of -55°C to 150°C (TJ) and supports gate-source voltages up to ±8V, with a threshold voltage of 1V at 250µA. It finds application in areas such as battery management, low-power portable devices, and general-purpose switching.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 3.3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 820mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.3 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 540 pF @ 10 V |