NTR2101PT1
MOSFET P-CH 8V 3.7A SOT23-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTR2101PT1 is a P-Channel, enhancement mode MOSFET designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 8V and a continuous Drain Current (Id) of 3.7A at 25°C, with a maximum power dissipation of 960mW (Ta). The on-resistance (Rds On) is specified at a maximum of 52mOhm at 3.5A and 4.5V Vgs. Key parameters include a gate charge (Qg) of 15nC at 4.5V Vgs and an input capacitance (Ciss) of 1173pF at 4V Vds. This device operates over a temperature range of -55°C to 150°C (TJ) and is supplied in a SOT-23-3 (TO-236) surface mount package, presented on tape and reel. It is commonly utilized in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 3.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 960mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 8 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1173 pF @ 4 V |
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