NTR1P02T3G
MOSFET P-CH 20V 1A SOT23-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTR1P02T3G is a P-Channel Power MOSFET designed for efficient power switching applications. This device features a Drain-to-Source Voltage (Vdss) of 20V and a continuous Drain current (Id) of 1A at 25°C, with a maximum power dissipation of 400mW. The On-Resistance (Rds On) is specified as 180mOhm maximum at 1.5A and 10V Vgs. It operates with a gate-source voltage range of ±20V and a threshold voltage (Vgs(th)) of 2.3V maximum at 250µA. Key parameters include a gate charge (Qg) of 2.5 nC maximum at 5V and input capacitance (Ciss) of 165 pF maximum at 5V. The NTR1P02T3G is housed in a compact SOT-23-3 (TO-236) surface-mount package, supplied on tape and reel. This component is suitable for use in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 400mW (Ta) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.5 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 165 pF @ 5 V |
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