NTR1P02T3
MOSFET P-CH 20V 1A SOT23-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTR1P02T3 is a P-Channel MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 1A at 25°C, with a maximum power dissipation of 400mW. The device offers a low on-resistance of 180mOhm at 1.5A and 10V, suitable for efficient switching and power management. Key parameters include a Gate Charge (Qg) of 2.5 nC and Input Capacitance (Ciss) of 165 pF, both specified at 5V. The NTR1P02T3 utilizes MOSFET technology and is housed in a compact SOT-23-3 (TO-236) surface mountable package, ideal for space-constrained designs. It operates across a temperature range of -55°C to 150°C. This component is commonly employed in consumer electronics, industrial control systems, and automotive applications where robust power switching is essential.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 400mW (Ta) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.5 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 165 pF @ 5 V |
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