NTR1P02LT1H
MOSFET P-CH 20V 1.3A SOT23-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi NTR1P02LT1H is a P-Channel MOSFET designed for automotive applications, qualified to AEC-Q101 standards. This device features a 20V Drain-Source Voltage (Vdss) and a continuous drain current capability of 1A (Ta) at 25°C. With a maximum on-resistance (Rds On) of 180mOhm at 1.5A and 10V, it offers efficient switching characteristics. The MOSFET is housed in a compact SOT-23-3 (TO-236) surface mount package, dissipating up to 400mW (Ta). Key electrical parameters include a gate charge (Qg) of 2.5 nC @ 5V and input capacitance (Ciss) of 165 pF @ 5V. It operates across a temperature range of -55°C to 150°C (TJ) and supports gate-source voltages up to ±20V. This component is suitable for use in power management and switching circuits within the automotive industry.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 400mW (Ta) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.5 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 165 pF @ 5 V |
| Qualification | AEC-Q101 |
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