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NTR0202PLT1

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NTR0202PLT1

MOSFET P-CH 20V 400MA SOT23-3

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTR0202PLT1 is a P-Channel MOSFET designed for surface mount applications, housed in a SOT-23-3 (TO-236) package. This component features a Drain-to-Source Voltage (Vdss) of 20V and a continuous drain current (Id) capacity of 400mA at 25°C. The device exhibits a maximum Rds On of 800mOhm at 200mA drain current and 10V Vgs, with a threshold voltage (Vgs(th)) of 2.3V at 250µA. Key electrical characteristics include an input capacitance (Ciss) of 70pF at 5V Vds and a gate charge (Qg) of 2.18nC at 10V Vgs. The maximum power dissipation is rated at 225mW (Ta), and it operates within an ambient temperature range of -55°C to 150°C. This device is commonly utilized in consumer electronics and industrial control systems. It is supplied on tape and reel.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C400mA (Ta)
Rds On (Max) @ Id, Vgs800mOhm @ 200mA, 10V
FET Feature-
Power Dissipation (Max)225mW (Ta)
Vgs(th) (Max) @ Id2.3V @ 250µA
Supplier Device PackageSOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs2.18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds70 pF @ 5 V

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