NTQS6463R2
MOSFET P-CH 20V 6.8A 8TSSOPManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTQS6463R2 is a P-Channel Power MOSFET designed for demanding applications. This component features a 20V drain-source breakdown voltage and a continuous drain current capability of 6.8A at 25°C (Ta). The device exhibits a low on-resistance of 20mOhm at 6.8A and 4.5V, optimized for efficient power switching. It operates with gate drive voltages as low as 2.5V and up to 4.5V for achieving minimum Rds On. The NTQS6463R2 is housed in an 8-TSSOP package, suitable for surface mounting, and offers a maximum power dissipation of 930mW (Ta). This MOSFET is commonly utilized in automotive, industrial automation, and power management systems where precise control and high efficiency are critical. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 6.8A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 930mW (Ta) |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | 8-TSSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 5 V |