NTP8G206NG
GANFET N-CH 600V 17A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi's NTP8G206NG is a GaNFET N-Channel power MOSFET designed for high-efficiency power conversion applications. This component features a drain-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 17 A at 25°C, with a maximum power dissipation of 96 W. The device offers a low on-resistance (Rds On) of 180 mOhm at 11 A and 8 V gate drive. Key parameters include a gate charge (Qg) of 9.3 nC at 4.5 V and input capacitance (Ciss) of 760 pF at 480 V. The NTP8G206NG is housed in a standard TO-220-3 package, suitable for through-hole mounting. This GaNFET technology is utilized in various industries including industrial power supplies, server and telecom power, and electric vehicle charging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 11A, 8V |
| FET Feature | - |
| Power Dissipation (Max) | 96W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 500µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 8V |
| Vgs (Max) | ±18V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.3 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 480 V |
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