NTP8G202NG
GANFET N-CH 600V 9A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTP8G202NG is a GaNFET N-Channel power MOSFET designed for high-efficiency power conversion applications. This device features a 600V drain-to-source voltage and a continuous drain current capability of 9A (Tc). With a maximum on-resistance of 350mOhm at 5.5A and 8V Vgs, it delivers low conduction losses. The NTP8G202NG has a gate charge of 9.3 nC (max) at 4.5V and input capacitance of 760 pF (max) at 400V. Its through-hole TO-220-3 package facilitates easy integration into existing designs. This component is suitable for use in power supplies, motor control, and renewable energy systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Cascode Gallium Nitride FET) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 5.5A, 8V |
| FET Feature | - |
| Power Dissipation (Max) | 65W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 500µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 8V |
| Vgs (Max) | ±18V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.3 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 400 V |
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