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NTP75N06G

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NTP75N06G

MOSFET N-CH 60V 75A TO220AB

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTP75N06G is a high-performance N-Channel Power MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 60 V and a continuous drain current (Id) of 75 A at 25°C (Ta). With a low on-resistance (Rds On) of 9.5 mOhm at 37.5 A and 10 V Vgs, it minimizes conduction losses. The gate charge (Qg) is rated at a maximum of 130 nC at 10 V, and input capacitance (Ciss) is 4510 pF at 25 V. This component is housed in a standard TO-220-3 through-hole package, facilitating easy integration into existing designs. The operating temperature range is -55°C to 175°C (TJ), and it supports a gate-source voltage (Vgs) of up to ±20V. The NTP75N06G is suitable for industrial power supplies, automotive applications, and motor control systems.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C75A (Ta)
Rds On (Max) @ Id, Vgs9.5mOhm @ 37.5A, 10V
FET Feature-
Power Dissipation (Max)2.4W (Ta), 214W (Tj)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4510 pF @ 25 V

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