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NTP75N06

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NTP75N06

MOSFET N-CH 60V 75A TO220AB

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

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The onsemi NTP75N06 is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 75A at 25°C. With a low on-resistance (Rds On) of 9.5mOhm at 37.5A and 10V Vgs, it minimizes conduction losses. The device boasts a gate charge (Qg) of 130 nC at 10V and an input capacitance (Ciss) of 4510 pF at 25V, facilitating efficient switching. Power dissipation is rated at 2.4W (Ta) and 214W (Tj). The NTP75N06 is housed in a TO-220-3 package, suitable for through-hole mounting, and operates within an extended temperature range of -55°C to 175°C (TJ). This MOSFET is commonly utilized in power supply units, motor control, and automotive electronics.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C75A (Ta)
Rds On (Max) @ Id, Vgs9.5mOhm @ 37.5A, 10V
FET Feature-
Power Dissipation (Max)2.4W (Ta), 214W (Tj)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4510 pF @ 25 V

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