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NTP75N03R

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NTP75N03R

MOSFET N-CH 25V 9.7A TO220AB

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTP75N03R is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 25 V and a continuous Drain Current (Id) of 9.7 A at 25°C. With a low on-resistance (Rds On) of 8 mOhm at 20 A and 10 V, it minimizes conduction losses. The device offers a maximum Gate Charge (Qg) of 13.2 nC at 5 V and an Input Capacitance (Ciss) of 1333 pF at 20 V. Its robust construction includes a maximum power dissipation of 1.25 W (Ta) and 74.4 W (Tc), operating across a temperature range of -55°C to 150°C (TJ). The NTP75N03R is supplied in a TO-220-3 package, suitable for through-hole mounting. This MOSFET is commonly utilized in power supply, automotive, and industrial control systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C9.7A (Ta)
Rds On (Max) @ Id, Vgs8mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)1.25W (Ta), 74.4W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)25 V
Gate Charge (Qg) (Max) @ Vgs13.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1333 pF @ 20 V

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