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NTP75N03L09G

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NTP75N03L09G

MOSFET N-CH 30V 75A TO220AB

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTP75N03L09G is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 75A at 25°C (Tc). Its low on-resistance (Rds On) of 8mOhm at 37.5A and 5V gate-source voltage (Vgs) minimizes conduction losses. The device boasts a gate charge (Qg) of 75 nC at 5V and an input capacitance (Ciss) of 5635 pF, ensuring fast switching speeds. With a maximum power dissipation of 125W (Tc), it is suitable for demanding thermal environments. The NTP75N03L09G is packaged in a TO-220AB through-hole configuration, facilitating easy assembly. This component finds application in power supplies, automotive electronics, and industrial motor control systems. The operating temperature range is -55°C to 150°C (TJ), and the maximum gate-source voltage is ±20V.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Rds On (Max) @ Id, Vgs8mOhm @ 37.5A, 5V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)5V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs75 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds5635 pF @ 25 V

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