NTP75N03-6G
MOSFET N-CH 30V 75A TO220ABManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NTP75N03-6G is an N-Channel Power MOSFET designed for high-current applications. This device features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 75 A at 25°C (Tc). With a low on-resistance (Rds On) of 6.5 mOhm at 37.5 A and 10 V gate drive, it minimizes conduction losses. The NTP75N03-6G offers a maximum power dissipation of 125 W at 25°C (Tc) and utilizes a TO-220AB package for through-hole mounting. Key electrical characteristics include a gate charge (Qg) of 75 nC at 5 V and an input capacitance (Ciss) of 5635 pF at 25 V. This component is suitable for use in power supply switching, motor control, and automotive applications. It operates within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 37.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5635 pF @ 25 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
MCH3376-TL-W
MOSFET P-CH 20V 1.5A 3MCPH
MCH3476-TL-H
MOSFET N-CH 20V 2A SC70FL/MCPH3
