NTP65N02RG
MOSFET N-CH 25V 7.6A/58A TO220ABManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTP65N02RG is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 25 V and a continuous drain current capability of 7.6 A at ambient temperature (Ta) and 58 A at case temperature (Tc). With a low Rds(on) of 10.5 mOhm at 20 A and 10 V, it offers minimal conduction losses. The MOSFET is packaged in a standard TO-220-3 through-hole configuration, facilitating ease of assembly. Key electrical parameters include a Gate Charge (Qg) of 9.5 nC at 4.5 V and an Input Capacitance (Ciss) of 1330 pF at 20 V. Operating across a wide temperature range of -55°C to 150°C, the NTP65N02RG is suitable for use in automotive, industrial, and power supply systems where robust performance and thermal management are critical. The maximum power dissipation is 1.04 W (Ta) and 62.5 W (Tc).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.6A (Ta), 58A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.04W (Ta), 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1330 pF @ 20 V |
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