NTP65N02R
MOSFET N-CH 25V 7.6A/58A TO220ABManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTP65N02R is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 25 V and a continuous drain current capability of 7.6A at 25°C ambient and 58A at 25°C case temperature. With a maximum power dissipation of 1.04W (Ta) and 62.5W (Tc), it is suitable for power conversion and management circuits. The device exhibits a low Rds On of 10.5mOhm at 20A and 10V, facilitated by a gate drive range of 4.5V to 10V. Key electrical parameters include a maximum gate charge of 9.5 nC at 4.5 V and input capacitance (Ciss) of 1330 pF at 20 V. The NTP65N02R is housed in a standard TO-220AB package, enabling efficient thermal management through its through-hole mounting. This MOSFET is commonly utilized in industrial, automotive, and power supply sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.6A (Ta), 58A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.04W (Ta), 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1330 pF @ 20 V |
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