NTP6448ANG
MOSFET N-CH 100V 80A TO220ABManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi NTP6448ANG. This N-Channel Power MOSFET features a 100V drain-source voltage and a continuous drain current of 80A at 25°C (Tc). It offers a low on-resistance (Rds On) of 13mOhm at 76A and 10V gate-source voltage. The device has a gate charge (Qg) of 120 nC maximum at 10V and an input capacitance (Ciss) of 4500 pF maximum at 25V. Designed for through-hole mounting in a standard TO-220-3 package, this MOSFET is suitable for applications in power supply units, automotive systems, and industrial motor control. The maximum gate-source voltage is ±20V, with a threshold voltage (Vgs(th)) of 4V maximum at 250µA.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 76A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 25 V |
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