NTP6411ANG
MOSFET N-CH 100V 77A TO220ABManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTP6411ANG is an N-Channel Power MOSFET designed for demanding applications. Featuring a Drain-Source Voltage (Vds) of 100 V and a continuous Drain Current (Id) of 77A at 25°C, this component offers robust performance. Its low on-resistance of 14mOhm at 72A and 10V drive voltage, coupled with a maximum power dissipation of 217W (Tc), makes it suitable for high-power switching and control circuits. The device has a gate charge (Qg) of 100 nC at 10V and an input capacitance (Ciss) of 3700 pF at 25V. Packaged in a TO-220-3 through-hole configuration, the NTP6411ANG operates across a wide temperature range of -55°C to 175°C. This MOSFET is commonly utilized in power supply units, motor control, and automotive electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 77A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 72A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 217W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3700 pF @ 25 V |
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