NTP60N06LG
MOSFET N-CH 60V 60A TO220ABManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTP60N06LG is an N-Channel Power MOSFET designed for high-current switching applications. This component features a drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 60A at 25°C (Ta). The low on-resistance (Rds On) of 16 mOhm at 30A and 5V gate drive voltage ensures efficient power transfer. Key parameters include a gate charge (Qg) of 65 nC maximum at 5V and input capacitance (Ciss) of 3075 pF maximum at 25V. The device supports a maximum gate-source voltage (Vgs) of ±15V and a threshold voltage (Vgs(th)) of 2V at 250µA. With a maximum power dissipation of 150W at the junction (Tj) and 2.4W at ambient (Ta), it is suitable for demanding thermal environments. The NTP60N06LG is housed in a standard TO-220-3 package for through-hole mounting and operates across a temperature range of -55°C to 175°C. This MOSFET is commonly utilized in industrial power supplies, automotive electronics, and motor control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Ta) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 30A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 150W (Tj) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3075 pF @ 25 V |
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