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NTP60N06L

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NTP60N06L

MOSFET N-CH 60V 60A TO220AB

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTP60N06L is an N-Channel Power MOSFET designed for high-current switching applications. This device features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain current (Id) capability of 60A at 25°C (Ta). With a maximum On-Resistance (Rds On) of 16mOhm at 30A and 5V gate drive, it offers efficient power transfer. The device has a low Gate Charge (Qg) of 65 nC at 5V and an Input Capacitance (Ciss) of 3075 pF at 25V. Maximum power dissipation is 2.4W (Ta) and 150W (Tj). The NTP60N06L is housed in a TO-220-3 package, suitable for through-hole mounting. It operates across a temperature range of -55°C to 175°C (TJ). This component is commonly utilized in power supply units, motor control, and automotive applications.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C60A (Ta)
Rds On (Max) @ Id, Vgs16mOhm @ 30A, 5V
FET Feature-
Power Dissipation (Max)2.4W (Ta), 150W (Tj)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)5V
Vgs (Max)±15V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs65 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds3075 pF @ 25 V

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