NTP60N06G
MOSFET N-CH 60V 60A TO220ABManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTP60N06G is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 60 V and a continuous Drain Current (Id) of 60 A at 25°C. It offers a low on-resistance (Rds On) of 14 mOhm at 30 A and 10 V, ensuring minimal conduction losses. The device utilizes MOSFET technology and is housed in a standard TO-220-3 package, suitable for through-hole mounting. Key electrical parameters include a Gate Charge (Qg) of 81 nC and an Input Capacitance (Ciss) of 3220 pF at 25 V. With a maximum power dissipation of 150W at the junction (Tj) and 2.4W at ambient (Ta), and an operating temperature range of -55°C to 175°C, the NTP60N06G is well-suited for demanding applications in industrial power supplies, automotive systems, and motor control circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Ta) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 150W (Tj) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3220 pF @ 25 V |
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