NTP60N06
MOSFET N-CH 60V 60A TO220ABManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTP60N06 is a power MOSFET featuring an N-Channel enhancement mode configuration. This component offers a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 60A at 25°C ambient. The device exhibits a low On-Resistance (Rds On) of 14mOhm maximum at 30A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 81 nC maximum at 10V and an Input Capacitance (Ciss) of 3220 pF maximum at 25V. With a maximum power dissipation of 150W at the junction temperature, it is housed in a TO-220-3 through-hole package. This MOSFET is suitable for applications in power switching and motor control.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Ta) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 150W (Tj) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3220 pF @ 25 V |
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