NTP5864NG
MOSFET N-CH 60V 63A TO220ABManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTP5864NG is an N-Channel Power MOSFET designed for demanding power applications. This component features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 63A at 25°C (Tc), with a maximum power dissipation of 107W (Tc). The low on-resistance (Rds On) of 12.4mOhm at 20A and 10V gate drive voltage (Vgs) ensures efficient power transfer. Key parameters include a gate charge (Qg) of 31 nC at 10V and input capacitance (Ciss) of 1680 pF at 25V. The device supports a wide operating temperature range of -55°C to 175°C (TJ) and accepts a maximum gate-source voltage (Vgs) of ±20V. Packaged in a standard TO-220AB configuration, the NTP5864NG is suitable for through-hole mounting and finds application in power supplies, motor control, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 63A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.4mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 107W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1680 pF @ 25 V |