NTP5863NG
MOSFET N-CH 60V 97A TO220ABManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTP5863NG is a N-Channel MOSFET designed for demanding applications. This component features a 60V drain-source breakdown voltage and can handle a continuous drain current of 97A at 25°C (Tc), with a maximum power dissipation of 150W (Tc). The low on-resistance of 7.8mOhm at 20A and 10V gate drive voltage makes it suitable for high-current switching. Key parameters include a gate charge of 55 nC at 10V and input capacitance of 3200 pF at 25V. The device is housed in a standard TO-220-3 through-hole package, facilitating easy board mounting. This MOSFET is engineered for operation across a wide temperature range of -55°C to 175°C (TJ). The NTP5863NG finds application in power supply units, motor control, and power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 97A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.8mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3200 pF @ 25 V |