NTP5862NG
MOSFET N-CH 60V 98A TO220ABManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTP5862NG is an N-Channel Power MOSFET designed for high-current applications. This device features a 60V Drain-to-Source Voltage (Vdss) and a continuous drain current capability of 98A (Tc) at 25°C. With a low on-resistance of 5.7mOhm at 45A and 10V Vgs, it minimizes conduction losses. The gate charge (Qg) is 82nC maximum at 10V, and input capacitance (Ciss) is 6000pF maximum at 25V.
Packaged in a TO-220-3 through-hole configuration, the NTP5862NG is suitable for demanding power management solutions. Its operating temperature range is -55°C to 175°C (TJ). This component is commonly utilized in industries requiring robust power switching, such as automotive, industrial power supplies, and motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 98A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 82 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6000 pF @ 25 V |
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