NTP5860NLG
MOSFET N-CH 60V 220A TO220ABManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi NTP5860NLG is a 60V N-Channel Power MOSFET, available in a TO-220-3 through-hole package. This device offers a continuous drain current (Id) of 220A at 25°C (Tc) and a maximum power dissipation of 283W (Tc). The Rds On is specified at 3mOhm maximum for an Id of 75A and Vgs of 10V. Key parameters include Vgs(th) of 4V (max) at 250µA, a gate charge (Qg) of 180 nC (max) at 10V, and input capacitance (Ciss) of 10760 pF (max) at 25V. The operating temperature range is -55°C to 175°C (TJ) with a Vgs (max) of ±20V. This component is suitable for applications in power supply and automotive sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 220A (Tc) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 283W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10760 pF @ 25 V |
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