NTP5426NG
MOSFET N-CH 60V 120A TO220ABManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTP5426NG is an N-Channel MOSFET designed for high-power applications. This device features a 60V drain-source breakdown voltage and a continuous drain current capability of 120A at 25°C (Tc). With a low on-resistance of 6mOhm at 60A and 10V Vgs, the NTP5426NG minimizes conduction losses. The MOSFET offers a maximum power dissipation of 215W (Tc) and a junction temperature range of -55°C to 175°C. Key electrical characteristics include a gate charge of 170 nC at 10V and an input capacitance of 5800 pF at 25V. The NTP5426NG utilizes TO-220AB packaging with through-hole mounting, making it suitable for power supply circuits, motor control, and industrial power applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 215W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5800 pF @ 25 V |
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