NTP5412NG
MOSFET N-CH 60V 60A TO220ABManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTP5412NG is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 60A at 25°C (Tc). The Rds On is specified at a maximum of 14mOhm at 30A and 10V gate drive. With a maximum power dissipation of 125W (Tc), it is suitable for high-power switching applications. Key parameters include a gate charge (Qg) of 85 nC (Max) at 0V and an input capacitance (Ciss) of 3220 pF (Max) at 25V. The device operates across a temperature range of -55°C to 175°C (TJ). It is housed in a TO-220-3 through-hole package, commonly utilized in power supply, motor control, and industrial automation systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 85 nC @ 0 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3220 pF @ 25 V |
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