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NTP5404NRG

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NTP5404NRG

MOSFET N-CH 40V 24A/167A TO220AB

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NTP5404NRG is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a drain-source voltage (Vdss) of 40 V and offers a continuous drain current (Id) of 24 A at 25°C ambient and 167 A at 25°C case temperature. With a maximum on-resistance (Rds On) of 4.5 mOhm at 40 A and 10 V gate-source voltage, it minimizes conduction losses. The device supports drive voltages from 5 V to 10 V and has a maximum gate charge (Qg) of 125 nC at 10 V. Input capacitance (Ciss) is specified at a maximum of 7000 pF at 32 V. Power dissipation reaches 5.4 W in free air and 254 W when mounted on a heat sink. The TO-220-3 package facilitates through-hole mounting. This MOSFET is suitable for use in automotive, industrial power supplies, and motor control systems, operating across a temperature range of -55°C to 175°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C24A (Ta), 167A (Tc)
Rds On (Max) @ Id, Vgs4.5mOhm @ 40A, 10V
FET Feature-
Power Dissipation (Max)5.4W (Ta), 254W (Tc)
Vgs(th) (Max) @ Id3.5V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7000 pF @ 32 V

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