NTP52N10G
MOSFET N-CH 100V 60A TO220ABManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTP52N10G is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 60A at 25°C. With a maximum On-Resistance (Rds On) of 30mOhm at 26A and 10V, it offers efficient power handling. The device supports a Gate-to-Source voltage (Vgs) range of ±20V and a threshold voltage (Vgs(th)) of 4V at 250µA. Key electrical characteristics include a maximum Gate Charge (Qg) of 135 nC at 10V and an input capacitance (Ciss) of 3150 pF at 25V. The NTP52N10G has a maximum power dissipation of 214W (Tc) and operates within an ambient temperature range of -55°C to 175°C. Supplied in a TO-220-3 package, this through-hole mounted MOSFET is suitable for power supply units, motor control, and automotive applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Ta) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 26A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 214W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 135 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3150 pF @ 25 V |
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