NTP45N06G
MOSFET N-CH 60V 45A TO220ABManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTP45N06G is a N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 45A at 25°C ambient. Its low on-resistance is specified at 26mOhm at 22.5A and 10V gate drive. With a Gate Charge (Qg) of 46 nC at 10V and an input capacitance (Ciss) of 1725 pF at 25V, it is suitable for efficient switching. The device supports a maximum gate-source voltage (Vgs) of ±20V and has a threshold voltage (Vgs(th)) of 4V at 250µA. Power dissipation is rated at 2.4W ambient and 125W at junction temperature. Packaged in a TO-220-3 through-hole configuration, this MOSFET operates within a temperature range of -55°C to 175°C. It finds application in power management, automotive, and industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Ta) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 22.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 125W (Tj) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1725 pF @ 25 V |
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