NTP30N20G
MOSFET N-CH 200V 30A TO220ABManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTP30N20G is an N-Channel Power MOSFET designed for high-performance applications. Featuring a Drain-to-Source Voltage (Vdss) of 200 V and a continuous Drain Current (Id) of 30 A at 25°C, this component offers a maximum On-Resistance (Rds On) of 81 mOhm at 15 A and 10 V gate drive. Its total gate charge (Qg) is 100 nC at 10 V, with an input capacitance (Ciss) of 2335 pF at 25 V. The device supports a gate-source voltage range up to ±30 V and has a threshold voltage (Vgs(th)) of 4 V at 250 µA. With a maximum power dissipation of 214 W at 25°C case temperature, it operates across an extended temperature range of -55°C to 175°C. The NTP30N20G is packaged in a standard TO-220-3 through-hole configuration, commonly utilized in power switching, motor control, and power supply circuits across industrial and automotive sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta) |
| Rds On (Max) @ Id, Vgs | 81mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 214W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2335 pF @ 25 V |
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