NTP30N06
MOSFET N-CH 60V 27A TO220ABManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTP30N06 is an N-Channel Power MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 60 V and a continuous Drain current (Id) of 27 A at 25°C. With a maximum On-Resistance (Rds On) of 42 mOhm at 15 A and 10 V gate drive, it offers efficient power switching. Key parameters include a gate charge (Qg) of 46 nC at 10 V and input capacitance (Ciss) of 1200 pF at 25 V. The NTP30N06 is housed in a standard TO-220-3 package, facilitating through-hole mounting. Its high power dissipation capability of 88.2 W (Tc) and an operating temperature range of -55°C to 175°C make it suitable for use in automotive and industrial power control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Ta) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 88.2W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
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