NTP2955
MOSFET P-CH 60V 2.4A TO220ABManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTP2955 is a P-channel MOSFET designed for power switching applications. This device features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 2.4A at 25°C. With a low On-Resistance (Rds On) of 196mOhms at 12A and 10V Vgs, it minimizes conduction losses. The NTP2955 has a maximum Gate Charge (Qg) of 14 nC at 10V and an Input Capacitance (Ciss) of 700 pF at 25V. It is packaged in a TO-220-3 through-hole configuration, supporting a maximum power dissipation of 2.4W (Ta) or 62.5W (Tc). Operating temperature ranges from -55°C to 175°C (TJ). This component is suitable for use in various industrial and consumer electronics applications requiring efficient power control.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 196mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 25 V |
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