NTP27N06G
MOSFET N-CH 60V 27A TO220ABManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTP27N06G is an N-Channel Power MOSFET designed for demanding applications. This device features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 27A at 25°C (Ta). With a maximum on-resistance (Rds On) of 46mOhm at 13.5A and 10V Vgs, it offers efficient switching and conduction characteristics. The gate charge (Qg) is specified at a maximum of 30 nC at 10V, and input capacitance (Ciss) is 1015 pF at 25V. This component offers a maximum power dissipation of 88.2W (Tc) and operates across a wide temperature range from -55°C to 175°C (TJ). The NTP27N06G is housed in a standard TO-220-3 through-hole package, making it suitable for various industrial and automotive power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Ta) |
| Rds On (Max) @ Id, Vgs | 46mOhm @ 13.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 88.2W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1015 pF @ 25 V |
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