NTP27N06
MOSFET N-CH 60V 27A TO220ABManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTP27N06 is an N-Channel Power MOSFET designed for demanding power applications. This component features a Drain-Source Voltage (Vdss) of 60 V and a continuous Drain current (Id) of 27 A at 25°C. With a low Rds On of 46 mOhm at 13.5 A and 10 V Vgs, it offers efficient power handling. The device is packaged in a TO-220AB configuration, suitable for through-hole mounting. Key electrical parameters include a Gate Charge (Qg) of 30 nC and an Input Capacitance (Ciss) of 1015 pF at 25 V. The maximum power dissipation is 88.2 W (Tc), and it operates across a temperature range of -55°C to 175°C (TJ). This MOSFET is commonly utilized in industrial automation, power supplies, and motor control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Ta) |
| Rds On (Max) @ Id, Vgs | 46mOhm @ 13.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 88.2W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1015 pF @ 25 V |
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