NTP18N06G
MOSFET N-CH 60V 15A TO220ABManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NTP18N06G is an N-Channel Power MOSFET designed for high-performance applications. This through-hole component features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 15A at 25°C. With a low on-resistance (Rds On) of 90mOhm maximum at 7.5A and 10V gate drive, it minimizes conduction losses. The device offers a maximum power dissipation of 48.4W at 25°C case temperature and operates across a wide temperature range of -55°C to 175°C. Key parameters include a gate charge (Qg) of 22 nC maximum at 10V and input capacitance (Ciss) of 450 pF maximum at 25V. The NTP18N06G is commonly utilized in power switching, voltage regulation, and motor control circuits across various industrial and automotive sectors. It is supplied in a TO-220-3 package.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 48.4W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 450 pF @ 25 V |
Request a Quote
Clients Also Buy
SMP3003-DL-1EX
MOSFET P-CH 75V 100A SMP-FD
FDMC86324
MOSFET N-CH 80V 7A/20A POWER33
NVTFS6H854NTAG
MOSFET N-CH 80V 9.5A/44A 8WDFN
