NTP185N60S5H
MOSFET N-CH 600V 15A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi SuperFET® V series NTP185N60S5H is a high-performance N-channel Power MOSFET designed for demanding applications. Featuring a Drain-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 15A at 25°C (Tc), this component offers a maximum on-resistance (Rds On) of 185mOhm at 7.5A and a 10V gate drive. Key parameters include a maximum Gate Charge (Qg) of 25 nC at 10V and an input capacitance (Ciss) of 1350 pF at 400V. The device supports a maximum Power Dissipation (Pd) of 116W (Tc) and operates across a temperature range of -55°C to 150°C (TJ). Packaged in a TO-220-3 configuration for through-hole mounting, the NTP185N60S5H is suitable for power supply, power factor correction, and motor control applications. The maximum gate-source voltage (Vgs) is ±30V, and the threshold voltage (Vgs(th)) is 4.3V at 1.4mA.
Additional Information
Series: SuperFET® VRoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 185mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 116W (Tc) |
| Vgs(th) (Max) @ Id | 4.3V @ 1.4mA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 400 V |
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