NTP165N65S3H
POWER MOSFET, N-CHANNEL, SUPERFEManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi SuperFET® III NTP165N65S3H is a high-performance N-channel Power MOSFET designed for demanding applications. Featuring a 650 V breakdown voltage (Vdss) and a continuous drain current (Id) of 19A (Tc), this device offers a maximum power dissipation of 142W (Tc). Its low on-resistance (Rds On) is specified at 165mOhm at 9.5A and 10V gate drive. Key parameters include a gate charge (Qg) of 35 nC @ 10 V and an input capacitance (Ciss) of 1808 pF @ 400 V. The MOSFET utilizes Metal Oxide technology and is housed in a TO-220-3 through-hole package. This component is suitable for use in power supply, lighting, and industrial motor control applications. It operates across a temperature range of -55°C to 150°C (TJ) and supports a maximum gate-source voltage (Vgs) of ±30V.
Additional Information
Series: SuperFET® IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 9.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 142W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1.6mA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1808 pF @ 400 V |
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