NTP13N10G
MOSFET N-CH 100V 13A TO220ABManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NTP13N10G is an N-Channel MOSFET designed for power switching applications. This through-hole component features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 13 A at 25°C. The device exhibits a maximum on-resistance (Rds On) of 165 mOhm at 6.5 A and 10 V gate-source voltage. With a maximum power dissipation of 64.7 W (Tc), it is suitable for use in industrial and automotive power management systems. The TO-220-3 package ensures robust thermal performance and ease of assembly. Key electrical parameters include input capacitance (Ciss) of 550 pF (max) at 25 V and gate charge (Qg) of 20 nC (max) at 10 V. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta) |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 64.7W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 25 V |
Request a Quote
Clients Also Buy
SMP3003-DL-1EX
MOSFET P-CH 75V 100A SMP-FD
FDMC86324
MOSFET N-CH 80V 7A/20A POWER33
NVTFS6H854NTAG
MOSFET N-CH 80V 9.5A/44A 8WDFN
